近日，0638太阳集团和北京大学东莞光电研究在Optics Express 发表InGaN红光发光二极管的研究成果被国际知名半导体杂志Semiconductor Today专题报道。文章中报道了采用双V坑结构提高InGaN红色发光二极管（LED）的内部量子效率（IQE）的最新研究成果[Optics Express，v32，p36489，2024]。Optics Express为光学领域的TOP期刊，影响因子3.2.0638太阳集团贾传宇副研究员为第一作者，李媛博士为通讯作者。

基于AlInGaN材料体系的微小型发光二极管在显示领域应用潜力巨大。然而，InGaN基红色LED的内量子效率（IQE）较低，限制了其发展和应用。在文章中设计的红光LED外延结构中，采用双V坑层作为应变消除层，以减小压缩应变，提高有源层的IQE。首先，在活性层下方生长InGaN/GaN超晶格（SLs），形成低密度大V型坑层。随后，采用多周期绿色和红色复含量子阱作为有源层。通过调整绿色多量子阱（MQWs）的生长参数，在有源区引入高密度小V坑层来释放压缩应变。V型凹坑将连续的大面积活动层分割成相互隔离的小块，阻止应变的传递，将长程应变转化为分离的局部应变。在613 nm和612.1 nm处，单V坑层LED A2和双V坑层LED B4的IQE峰值分别为10.5%和21.5%。IQE提高了204.7%。研究结果表明，双V型凹坑结构可以减轻InGaN量子阱的压缩应变更有效，减小了压电极化FELD的影响，提高了IQE。

第一作者贾传宇，副研究员，获评“东莞市特色人才二类”，2010年获得北京大学物理学院博士学位。主要从事氮化物半导体光电子器件研发，主要从事III-V氮化物半导体光电子器件MOCVD外延技术研究，具体研究领域涉及高功率LED、蓝光LD、太阳能电池、六英寸及八英寸Si基电子功率器件等。先后发表SCI论文21篇，获得授权国家发明专利30项。论文被氮化物半导体领域的国内外知名高校和科研单位引用，论文引用率大于300次，作为项目负责人承担1项国家自然科学基金青年基金项目《高可靠性高量子效率氮化镓基绿光激光器关键技术研究》，东莞市核心技术攻关前沿项目《面向非视距通讯领域的深紫外LED关键技术研究》。

通讯作者：李媛，博士，太阳集团www06380638太阳集团特聘副研究员，硕士生导师，主要研究方向为第三代半导体材料与器件。具体设计III-V族化合物半导体外延生长、缺陷控制及相关器件（包括LED、紫外探测、HEMT等）研究。

该论文研究得到国家重点研究开发项目（2021YFB3600200 2023YFB3609800）；《广东省重点区域研究开发规划》（2020B010169003）；广东省基础与应用基础研究基金（2021A151511160、2023A1515030034、2023A151140018）；国家自然科学基金（6204039）项目的支持。

撰稿：贾传宇；初审：李媛；复审：魏锋；终审：翁炎泉

Associate Researcher Chuanyu Jia of International School of Microelectronics was featured in the internationally renowned semiconductor magazine "Semiconductor Today".

Recently, Dongguan University of Technology's International School of Microelectronics and Peking University's Dongguan Optoelectronics Research in Optics Express published InGaN red light-emitting diode research results were featured in the internationally renowned semiconductor magazine Semiconductor Today. The article reports the latest research results on improving the internal quantum efficiency (IQE) of InGaN red light-emitting diodes (LEDs) by using a double V-pit structure [Optics Express, v32, p36489, 2024]. Optics Express is a TOP journal in the field of optics, with an impact factor of 3.2. Associate researcher Chuan-Yu Jia of the International School of Microelectronics is the first author and Dr Yuan Li is the corresponding author.

Micro-sized LEDs based on the AlInGaN material system have significant application potential in the display field. However, the low internal quantum efficiency (IQE) of InGaN-based red LEDs has limited their development and application. In this study, a double V-pit layer was introduced as a strain-relief layer in the epitaxial structure of red LEDs to reduce compressive strain and enhance the IQE of the active region. First, an InGaN/GaN superlattice (SL) was grown beneath the active layer to form a low-density large V-pit layer. Subsequently, multi-period green and red composite quantum wells were used as the active layer. By adjusting the growth parameters of the green multiple quantum wells (MQWs), a high-density small V-pit layer was introduced into the active region to release compressive strain. The V-shaped pits divide the continuous large-area active layer into isolated segments, preventing strain transmission and transforming long-range strain into localized strain. At 613 nm and 612.1 nm, the IQE peak values of single V-pit layer LED A2 and double V-pit layer LED B4 were 10.5% and 21.5%, respectively, demonstrating a 204.7% improvement in IQE. The study indicates that the double V-pit structure more effectively mitigates the compressive strain in InGaN quantum wells, reduces the impact of piezoelectric polarization fields (FELD), and improves IQE.

The first author, Chuanyu Jia, is an associate researcher and was awarded ‘Dongguan Featured Talent Category II’. He received his PhD degree from the School of Physics, Peking University in 2010. He is mainly engaged in the research and development of nitride semiconductor optoelectronic devices, mainly engaged in the research of III-V nitride semiconductor optoelectronic devices MOCVD epitaxial technology, the specific research area involves high-power LED, blue LD, solar cells, six-inch and eight-inch Si-based electronic power devices, etc. He has published 21 SCI papers and obtained 30 national invention patents. His papers have been cited by well-known universities and research institutes in the field of nitride semiconductors at home and abroad, and the citation rate of his papers is more than 300 times. As the project leader, he undertook one project of the National Natural Science Foundation of China (NSFC) Youth Fund, ‘Research on the Key Technology of Highly Reliable Gallium Nitride-Based Green Lasers with High Quantum Efficiency’, and Dongguan Municipal Core Technology Tackling Frontier Project, ‘Research on the Key Technology of Deep Ultraviolet LEDs for the Field of Non-Line-of-Sight Communication’.

Corresponding author: Yuan Li, Ph.D., Specially Appointed Associate Researcher of Microelectronics Institute of Dongguan University of Technology, Master's supervisor, main research direction is third generation semiconductor materials and devices. Specifically designed III-V compound semiconductor epitaxial growth, defect control and related devices (including LED, UV detection, HEMT, etc.) research.

This dissertation research was supported by the National Key Research and Development Project (2021YFB3600200 2023YFB3609800); Guangdong Province Key Regional Research and Development Plan (2020B010169003); Guangdong Province Basic and Applied Basic Research Funds (2021A151511160, 2023A1515030034, 2023A151140018); and the National Natural Science Foundation of China (6204039) project support.

Author: Chuanyu Jia; First review: Yuan Li; Second review: Feng Wei; Final review: Yanquan Weng