团队介绍

本团队面向量子计算、深空探测和6G通信等应用领域，利用化合物半导体优势开发具有超低噪声的化合物半导体器件和电路、毫米波、太赫兹器件和电路以及超高速的数模混合电路等研究。

团队负责人

金智、理学博士、教授、博士生导师、中国科学院百人计划学者、享受政府特殊津贴专家。长期从事化合物半导体高频器件和电路的工艺、模型和设计研究。长期从事GaAs、InP、GaN等化合物半导体材料的外延生长、器件工艺和射频、毫米波、太赫兹集成电路的研究工作。在III-V族化合物半导体器件的结构设计、物理机制、工艺和电路研究方面取得许多有影响的研究成果：在国内率先研发成功满足W波段（75-110 GHz）毫米波电路的需求的InP基双异质结构双极晶体管（DHBT）；在国内率先研发成功工作频率大于40 GHz的InP DHBT分频器；研究成功国内速度最高的化合物半导体超高速直接数字频率合成器（DDS）和模式转换器（ADC），工作频率分别达到10 GHz和4 GSps；基于自主工艺，在国内率先实现了系列W波段单片集成电路（MMIC），并实现了系统验证;实现了太赫兹肖特基二极管、太赫兹混合集成电路设计和工艺，并研发成功太赫兹检波器、倍频器件等模块；基于肖特基二极管的电路实现了产品销售。研发成功9-15 GHz、25-30 GHz两款高频段5G基站用功率放大器芯片。共发表各类学术论文300余篇。申请发明专利70余项。作为负责人先后主持了01、02、03国家科技重大专项、国家自然科学基金重点项目2项、JKW JCJQ项目等10余项国家级科研项目。获得省部级二等奖一项、中国侨届贡献奖一等奖。

                邮箱：jinzhi@dgut.edu.cn。

团队成员

团队正处于组建之中。希望有志于做相关基础和应用研究的人员和同学的加入。

团队代表性学术论文

1. Z. Feng, W. Ding, Y. Su, R. Feng, F. Zhou, H. Gong, and Z. Jin. A Four-Port Noise De-embedding Methodology for On-Wafer Microwave Device based on Electromagnetic Simulation. IEEE Microwave and Wireless Components Letters, 2024, Vol. 34, 943.

2. F. Zhou, R. Feng, S. Cao, Z. Feng, T. Liu, Y. Su, J. Shi, W. Ding and Z. Jin. Origin and Suppression of Kink Effect in InP HEMTs at Cryogenic Temperatures. Applied Physics Letters, 2024, Vol. 124, 063503.

3. R. Feng, S. Cao, Z. Feng, F. Zhou, T. Liu, Y. Su, Z. Jin, InGaAs/InAlAsInP-based HEMT with the current cutoff frequency 441 GHz，Journal of Infrared and Millimeter Waves, 2024, Vol. 43, 331.

4. Z. Feng, S. Cao, R. Feng, F. Zhou, Y. Su , W. Ding, and Z. Jin. An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation. IEEE Transactions on Electron Devices, 2023, Vol. 70(3), 934.

5. F. Zhou, R. Feng, S. Cao, Z. Feng, T. Liu, Y. Su, J. Shi, W. Ding and Z. Jin. “Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs.” Journal of Materials Science: Materials in Electronics, 2023, Vol. 34, 2005.

6. Z. Zhu, W. Ding, Y. Wang, J. Ding, F. Zhou, Y. Su, F. Yang, Z. Jin. Improving the RF Performance of InP DHBT Using fT-Doubler Technique, IEEE Microwave and Wireless Technology Letters, 2023, Vol. 33(12) 1615.

7. Y. Wang, J. Ding, R. Feng, S. Cao, F. Zhou, W. Ding, Y. Su, Z. Jin. Accurate Modeling Approach for InP fT-Doubler Based on Electromagnetic Simulation, IEEE Transactions on Electron Devices, 2023, Vol. 70, 934.

8. S. Cao, R. Feng, F. Zhou, Z. Feng, P. Ding, Y. Su, Z. Jin. Performance Improvement by SiO2 Hardmask in 100-nm InP-Based HEMTs for TMIC Applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, Vol. 70, 2262.

9. C. Zhu，Z. Lin，D. Zhang，J. Shi, Z. Jin. Predicting the Level of Background Current Noise in Graphene Biosensor through a Non-Covalent Functionalization Process, CRYSTALS, 2023, Vol. 13, 359.

10. Y. Yan, S. Peng, Z. Jin, D. Zhang, J. Shi. Recovering the Intrinsic Electrical Property of a Graphene Field-Effect Transistor by Interface Cleaning Technology, ACS APPLIED ELECTRONIC MATERIALS, 2023, Vol. 5, 3113.

11. J. Zhang, B. Mei, Y. Su, F. Yang, Z. Jin and Y. Zhong. Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study [J]. IEEE Transactions on Electron Devices, 2023, 70(8), 4225.

12. H. Yun，B. Mei，Y. Su，F. Yang，P. Ding，J. Zhang，S. Meng，C. Zhang，Y. Sun，H. Zhang，Z. Jin，Y. Zhong. Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization[J]. Journal of Applied Physics, 2023, 133(20).

13. Wang, Y.-J.; Wang, P.; Wan, L.-X.; Jin, Z. Signal-Independent Background Calibration with Fast Convergence Speed in Pipeline-SAR ADC. Micromachines, 2023, 14, 300.

14. Wang, Y.; Wang, Y.; Wan, L.; Jin, Z. Linearity Enhancement Techniques for PGA Design. Micromachines, 2023, 14, 356.

15. W. Zhen, L. Xiao, S. Cao, Y. Su, Z. Jin. A 35-GHz Bandwidth 30 GSa/s InP Track-and-Hold Amplifier using Enhanced fT-Doubler Technique. 2022 IEEE Transactions on Circuits and Systems II: Express Briefs TCAS2, 2022, 69(11).

16. W. Zhen, L. Xiao, S. Cao, Y. Su, Z. Jin. RF Performance Improvement of InP Frequency Divider by Using Enhanced fT-Double Technique. IEEE Microwave and Wireless Components Letters, 2022, 32(9).

17. L. Xiao, W. Zhen, S. Cao, Y. Su, Z. Jin. A Broadband Static Frequency Divider up to 62 GHz in InP DHBT with Capacitive Degeneration. IEICE Electronics Express 19(9): 20220117(2022)

18. S. Peng, Z. Jin. Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene. Crystals, 2022, 12, 184.

19. Y. Yan, Z. Jin. Seeding-Layer-Free Deposition of High-k Dielectric on CVD Graphene for Enhanced Gate Control Ability. Crystals, 2022, 12, 513.

20. Y. Wang, Z. Jin. An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors. Chinese Phys. B 31(6): 068502 (2022).

21. S. Feng, Z. Jin. Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation. Chinese Phys. B 31(4): 047303(2022)

22. H. Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchu Ye, Z. Jin. Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode. Micromachines 13, no. 5: 748(2022).

23. H. Zhang, Xuanwu Kang, Yingkui Zheng, Hao Wu, Ke Wei, Xinyu Liu, Tianchu Ye, Z. Jin. Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode. Micromachines 12, no. 11: 1296 (2021).

24. H. Kang, Zhi Jin. Non-destructive Visualization of Graphene on Pt with Methylene Blue Surface Modification, SCIENCE CHINA Materials, 65, 2763–2770 (2022)

25. S. Wang, Zhi Jin. Morphology Regulation of MoS2 Nanosheet-Based Domain Boundaries for Hydrogen Evolution Reaction, ACS Applied Nano Materials, 5, 2, 2273–2279 (2022)

26. S. Wang, Zhi Jin. Fast and controllable synthesis of AB-stacked bilayer MoS2 for photoelectric detection, 2D Mater. 9, 015016 (2022)

27. W. Zhen, S. Li, S. Cao, Y. Su, Z. Jin.A 25-GSa/s InP DHBT Track-and-Hold Amplifier Using Active Peaking Input Buffer, IEEE Microwave and Wireless Components Letters, 2021, 31(10): 1142-1145.

28. C. Zhu, S. Peng, X. Zhang, Y. Yao, X. Huang, Y. Yan, D. Zhang, J. Shi, Z. Jin. Reducing metal/graphene contact resistance via N, N-dimethylacetamide-assisted clean fabrication process, Nanotechnology, 2021, 32(31): 315201.

29. X. Liu, Y. Zhang, H. Wang, L. Qi, B. Wang, J. Zhou, W. Ding, Z. Jin.TSPEM Parameter Extraction Method and Its Applications in the Modeling of Planar Schottky Diode in THz Band, Electronics, 2021, 10(13): 1540.

30. X. Zhang, Y. Yao, S. Peng, C. Zhu, X. Huang, Y. Yan, D. Zhang, J. Shi, Z. Jin.Stable p-type chemical doping of graphene with reduced contact resistance by single-layer perfluorinated polymeric sulfonic acid, Nanotechnology, 2021, 32(15): 155705.

31. X. Huang, J. Shi, Y. Yao, S. Peng, D. Zhang, Z. Jin.Layer thickness influenced irradiation effects of proton beam on MoS2 field effect transistors, Nanotechnology, 2021, 32(13): 135204.

32. X. Zhang, H. Zhu, S. Peng, G. Xiong, C. Zhu, X. Huang, S. Cao, J. Zhang, Y. Yan, Y. Yao, D. Zhang, J. Shi, L. Wang, B. Li, Z. Jin.Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation, Chinese Journal of Semiconductors, 2021, 42(11): 112002.

33. Shaojun Li, Yongbo Su, Hongliang Lv, Lei Zhou, Yimen Zhang, Yuming Zhang, Jun Hu, Fang Yang, Zhi Jin, A broadband InP track-and-hold amplifier using emitter capacitive/resistive degeneration, IEEE Microwave and Wireless Components Letters, 2020, 30 (4), 391-394.

34. Dayong Zhang, Zhi Jin, Jingyuan Shi, Songang Peng, Xinnan Huang, Yao Yao, Yankui Li, Wuchang Ding, Dahai Wang. A uniform stable P-type graphene doping method with a gold etching process, RSC Adv, 2020,10:3314-3318.

部分代表性成果及简介

团队拥有的部分主要设备介绍

深低温、微波和噪声测试平台

化合物半导体工艺平台

毫米波、太赫兹电路和超高速数模混合电路设计平台